Date: Thursday, November 21, 2024

Time:  Noon to 1:10 PM

Location: CHTM, Room 101 and Zoom

Speaker:

Evan M. Anderson
Sanida National Laboratories

Abstract:

Infrared sensors are used in a wide variety of applications, including in space. However, the radiation environment of space can degrade sensor performance due, in part, to the creation of atomic-scale defects through ion bombardment. In order to improve sensor resilience to ion irradiation, these defects must be identified and fully characterized. Narrow band gap materials are required for infrared sensing, which makes defect identification particularly difficult because all defects are near band edges and can be thermally activated at ambient temperatures. This presentation will describe our combined approach of materials characterization, electronic device measurements, and first principles calculations to identify atomic-scale defects in InAs as a model material system.

Biography:

Evan M. Anderson is a Principal Member of Technical Staff at Sandia National Laboratories in Albuquerque, NM. His research interests span surface science, semiconductors, and optoelectronic devices with emphases on scanning tunneling microscopy, microelectronics fabrication, and infrared sensors based on III-V compound semiconductors. He received his BS in Materials Science and Engineering from Purdue University and his MSE and PhD in Materials Science and Engineering from the University of Michigan.