Date: Thursday, September 5, 2024

Time:  12:00 PM - 1:10 PM MST

Location: CHTM, Room 101 & Zoom

Speaker:

Dr. Wondwosen Metaferia of Intel Corporation in New Mexico

Abstract:

Silicon remains the preferred choice for many applications in semiconductor devices due to its balance of performance and affordability. However, III-V materials offer superior performance, though their use has been limited to high-value or specialized markets because of the lack of a cost-effective, high-quality manufacturing method. I will present the research that my colleagues and I have conducted on the development of III-V material synthesis. We have explored a hydride vapor phase epitaxy technique that could reduce the cost of depositing III-V semiconductors without compromising the optoelectronic quality necessary for III-V technologies to surpass silicon-based alternatives. Our findings highlight the potential benefits of this breakthrough, particularly in the context of terrestrial photovoltaics, where cost considerations are paramount.

Biography:

Wondwosen Metaferia is currently employed at Intel Corporation in New Mexico, holding the position of Senior Module Development Engineer. In his role, he leads module program development, collaborating closely with Foundry clients to create microchips tailored for cutting-edge AI technologies. Before joining Intel, Wondwosen was engaged in research at the National Renewable Energy Laboratory (NREL) in Colorado, USA, where he focused on designing high-efficiency solar cells and pioneering cost-effective, high-throughput methods for semiconductor production. Subsequently, he served as a principal engineer at Rocket Labs in Albuquerque, New Mexico, USA, where his expertise contributed to the design of multijunction solar cells optimized for space applications.